Reliability System
Reliability testing stresses and measures test structure degradation as a function of time. This is the most common way to test process reliability. The reliability systems are geared for long-term or slow reliability testing, where multiple devices are stressed at once and measured periodically over hours, days, and months.
 RI-51 TDDB Test System
Reliability system capable of testing up to 552 DUTs at once. Each system can run up to 12 separate experiments at once spread over 6 ovens.
Test capabilities include measuring current at stress voltage and up to four other test voltages (SILC testing). Stress/test voltages are ±10V at 1A or ±100V at 100mA per experiment. Temperature can be hot and cold, with standard load boards and chambers limited to 200°C.
For a complete copy, see RI-51 Datasheet
RI-52 EM Test System
Reliability system capable of testing up to 1152 DUTs at once. Each system can run up to 36 separate experiments at once spread over 12 ovens. Test capabilities include measuring 2, 3, and 4T DUT resistance along with extrusion monitoring. Stress current is up to 100mA at 100V per experiment. Standard load boards and chambers are limited to 400°C.
For a complete copy, see RI-52 Datasheet
RI-53 Transistor (HCI) Test System
Reliability system capable of testing up to 144 DUTs (276 TDDB) at once. This is not a typical HCI system. Instead of one or a few measurements, practically the full line of Reedholm dc parametric tests can be run, such as Vt, gm, peak Isub, Ids at Vgs, etc. In other words, dozens or even hundreds of tests, including sweeps (I/V curves), can be executed during the experiment.
For a complete copy, see RI-53 Datasheet |
