To perform rapid, non-destructive electrical characterization of non-metallized planar semiconductors:
SiC, GaAs, 2DEG, GaN, InP, CdS, InSb, etc.
To substitute alternative methods which take several hours and require detailed metallization.
- characterization of thin epitaxial layers grown on silicon.
- Thin-film characterization screening tool to conduct rapid integrity tests on various substrate surfaces.
Mercury Probes can be connected to C-V plotters, curve tracers, doping profilers, computerized semiconductor measurement systems, CSM-WIN
Resistance can be measured on thin films composed of any material that does not react with mercury.
Metals, semiconductors, oxides, and chemical coatings may be measured successfully.
Mercury Probes can measure oxidized Silicon wafers or bare Silicon wafers
For MOS devices a darkbox is available to prevent light interference.