Medium Energy Ion Scattering MEIS K120 For Surface Analysis.
Applications:
• Ultra thin film, Nano-particle analysis
• Time-of-Flight surface analysis
• Qualitative and quantitative analysis
• Patterned sample analysis
• Semiconductor, LCD, Bio, etc.
• Quantum-dot analysis
Specifications:
• Projectile : He＋, Ne＋
• Source type : RF plasma ion source
• Acceleration energy : 70 keV~120 keV
• Delay line detector
• Focused beam size : < 10 ㎛
• High resolution of depth (3Å)
• Short acquisition time
Principle: Time-of-Flight, Focused Ion Beam < 10um Surface Analysis
to measure atomic mass, depth and surface structure
K (m1/ m2, q) = Es/ E1, Coulomb scatter cross section,
small charge transfer : composition absolute analysis
dE/dx(10~100 eV/ML) & high resolution analysis
: atomic layer depth resolution (~10 nm surface, interface analysis of ultra thin film)
channeling & blocking : local strain, depth profile of atomic structure
Benefits:
Atomic scale depth resolution
Selection of up to 3 layers
High spatial resolution
Nano-particle size and shape
Absolute quantification
Non-destructive
Lower cost than TEM
