Misoriented Wafers

    • Manufacture of customized silicon wafers
    • From 1’’ to 6’’, any size from 10mm to 150mm

  • Thickness up to 5 mm
  • Any position for the flat
  • Resistivity:
    -Cz Intrinsinc 200 Ohms.cm (Beyond this value, no possibility to measure, Fz are used)
    -Highly doped :
    P Bore: 0,8 mOhm.cm
    N Bore: 1 mOhm.cm
  • Misorientation from 0.20° at 14° regarding the orientations (100) or (111) with an accuracy of 0.02°
  • Misorientation from 14° to 25° regarding the orientations (100) or (111) with an accuracy of 0,5°

 

Customers

  • MEMS, nano wired, nanotube, graphene, exotic material growth, biochemistry

 

Core Competences

  • Misorientation accuracy
  • Orientation beyond 5°

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