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- Manufacture of customized silicon wafers
- From 1’’ to 6’’, any size from 10mm to 150mm
- Thickness up to 5 mm
- Any position for the flat
- Resistivity:
-Cz Intrinsinc 200 Ohms.cm (Beyond this value, no possibility to measure, Fz are used)
-Highly doped :
P Bore: 0,8 mOhm.cm
N Bore: 1 mOhm.cm - Misorientation from 0.20° at 14° regarding the orientations (100) or (111) with an accuracy of 0.02°
- Misorientation from 14° to 25° regarding the orientations (100) or (111) with an accuracy of 0,5°
Customers
- MEMS, nano wired, nanotube, graphene, exotic material growth, biochemistry
Core Competences
- Misorientation accuracy
- Orientation beyond 5°
