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- Manufacture of customized silicon wafers
- From 1’’ to 6’’, any size from 10mm to 150mm
- Thickness up to 5 mm
- Any orientation
- Any positions and quantities for the flats
- Resistivity :
Cz Intrinsinc > 200 Ohms.cm (Beyond this value, no possibility to measure. Fz are used)
Highly doped :
P Bore: 0,7 mOhm.cm min.
N Bore: 1 mOhm.cm min.
Customers
- MEMS, nano wired, nanotube, graphene, exotic material growth, biochemistry
Core Competences
- MEMS, nano wired, nanotube, graphene, exotic material growth, biochemistry
- Low and medium volumes totally customized
- Orientation accuracy (Up to 0.05°) on the side and the main flat (frank flat accuracy up to 0.05°)
- TTV Double side: 4’’ > 400µm => TTV < 2µm
6’’ > 500 µm => TTV < 3 µm - TTV measurement: possible to deliver the value for each unit if the wafer is identified by laser marking
