Standard Wafers

    • Manufacture of customized silicon wafers
    • From 1’’ to 6’’, any size from 10mm to 150mm

  • Thickness up to 5 mm
  • Any orientation
  • Any positions and quantities for the flats
  • Resistivity :
    Cz Intrinsinc > 200 Ohms.cm (Beyond this value, no possibility to measure. Fz are used)
    Highly doped :
    P Bore: 0,7 mOhm.cm min.
    N Bore: 1 mOhm.cm min.

 

Customers

  • MEMS, nano wired, nanotube, graphene, exotic material growth, biochemistry

 

Core Competences

  • MEMS, nano wired, nanotube, graphene, exotic material growth, biochemistry
  • Low and medium volumes totally customized
  • Orientation accuracy (Up to 0.05°) on the side and the main flat (frank flat accuracy up to 0.05°)
  • TTV Double side: 4’’ > 400µm => TTV < 2µm
    6’’ > 500 µm => TTV < 3 µm
  • TTV measurement: possible to deliver the value for each unit if the wafer is identified by laser marking

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