FAQ - MDC Europe

Automatic Four Point Probe

Why use AIT automatic Mapping probes?

CMT automatic mapping series are fully automatic systems to measure sheet resistance and resistivity with PC remote control or in manual mode. Typical PC configurations are Windows 7 / 32bit.

Depending on application as well as sample size and shape the following series are available:

  • CMT-100S for wafers up to 180mm or squares up to 160mm
  • CMT-2000N for wafers up to 200mm
  • CMT-2000PV for wafers up to 230mm or squares up to 156mm
  • CMT-3000 for glass, LCD, ITO panels up to 600 x 720mm
  • CMT-5000 for wafers up to 450mm or squares up to 300mm

The xyz resolution is +/- 1 mm.

The system accuracy of 0.5% is based on a test result with a precision network resistor. Actual system accuracy is limited by the reference used. For example, a certificated VLSI reference value has an error tolerance of 1.5%. Actual measurement accuracy depends on various factors including environment, contacting condition and probe head, wafer surface, etc. For example, typical accuracy may include additional tolerances for probe wear-out and repeatability.

PC compatible with Windows 10/11 versions.

The standard remote interface is the RS232 serial communication. A USB converter can also be used.

Manual Four Point Probe

Why use Jandel probes?

Jandel Probes offer the accuracy and perfection of more than 30 years experience. Tip radii and probe spacings are checked by interferometer and video inspection for certainty of accuracy. Spring loadings are checked by electronic force gauge. Unique Standard specifications include:

  1. Upper and lower guides are jewelled
  2. Solid tungsten carbide needles for superior durability and accuracy
  3. Teflon insulation giving minimum leakage

The best probehead for you depends entirely on your application and what equipment you are using. Contact us with details of the probe you have now and we will let you know the best probe for you. Alternatively, if you wish to make a custom set up, we can help you to identify which probe will work best.

The characteristics needed vary depending on the material being probed. If you contact us we may be able to advise the best characteristics for your samples from past experience. Alternatively, once an order is placed, you have the option of sending us a typical sample of the material you wish to probe and we will test it so that you can be sure to receive the best characteristics for your application.

The unit of measurement when measuring the resistance of a thin film of a material using the four point probe technique. It is equal to the resistance between two electrodes on opposite sides of a theoretical square. The size of the square is unimportant and so strictly the measurement is in ohms, however ohms/square distinguishes measurement of a thin sheet from measurement of, for instance, a wire.

The unit of measurement when measuring the bulk or volume resistivity of thick or homogeneous materials such as bare silicon wafers or silicon ingots, using the four point probe technique.

The term Ohms.cm (Ohms centimeter) refers to the measurement of the “bulk” or “volume” resistivity of a semi-conductive material. Ohms.cm is used for measuring the conductivity of a three dimensional material such as a silicon ingot or a thick layer of a material. The term “Ohms-per-square” is used when measuring sheet resistance, i.e., the resistance value of a thin layer of a semi-conductive material. The equations for calculating bulk resistivity are different from those used to calculate sheet resistance, however, if the sheet resistance is known, bulk resistivity can be calculated by multiplying the sheet resistance in Ohms-per-square by the thickness of the material in centimeters.

CV/IV Analysis system

Why use a Mercury Probe?

To perform rapid, non-destructive electrical characterization of non-metallized planar semiconductors: SiC, GaAs, 2DEG, GaN, InP, CdS, InSb, etc. To substitute alternative methods which take several hours and require detailed metallization — characterization of thin epitaxial layers grown on silicon, thin-film characterization screening tool to conduct rapid integrity tests on various substrate surfaces. Mercury Probes can be connected to C-V plotters, curve tracers, doping profilers, computerized semiconductor measurement systems, CSM-WIN. Resistance can be measured on thin films composed of any material that does not react with mercury. Metals, semiconductors, oxides, and chemical coatings may be measured successfully. Mercury Probes can measure oxidized Silicon wafers or bare Silicon wafers. For MOS devices a darkbox is available to prevent light interference.

A mercury probe can be safely used in the usual laboratory or production environment. Platform measurements confirmed less than standard Mercury concentration of 0.05mg/m3. Areas surrounding the Mercury storage containers may be higher than standard Mercury concentration so good ventilation is recommended for storage and replacement. The Mercury probe provides the following inherent safety features:

  1. No Mercury is applied without a loaded wafer
  2. The automatic PURGE position passage assures removal of the Hg on the platform
  3. A darkbox option is available to contain potential Mercury droplets in a confined area
  4. The Mercury probe system eliminates air exposure of Mercury in the OFF position
  5. A Mercury spill kit is available
  6. A Vapor filter option is available

The system is delivered with a complete set of manuals and software.

  • Programs to setup and zero the cap meter
  • Utilities to calibrate the contact area and stray capacitance
  • Utilities for system parameters and system operation

A comprehensive on-screen HELP function provides specific program information about all program functions, measurement suggestions, technical information, and references.

The MDC C-V and I-V systems provide comprehensive coverage of C-V and/or I-V characterizations through a variety of probes, test equipment and PC software control (CSM/Win). Specific reasons include: menu-driven operation, test Recipes can be saved and edited, storage and Recall possibility of complete data sets in all programs, storage of Data Summaries in Production Programs, comprehensive single-screen reports of test results, overlay plotting of multiple data sets, limits checking of test results, Series Resistance Correction, temperature compensation of all measurements.

MOS production C-V measurements with or w/o bias-temperature stress with correction of series resistance effects. MOS ENGINEERING TESTS: MOS C-V and Conductance-Voltage plotting, theoretical MOS C-V curve generation and Dit computation, Capacitance-Time measurements (Zerbst analysis), doping profiling of sub-oxide regions, thin oxide analysis using the Ricco method, quantum effects and polysilicon depletion. JUNCTION TESTS: adaptive C-V data gathering for doping and resistivity profiles, junction series resistance and built-in potential. VARIABLE FREQUENCY MOS C-V TESTS. MULTIPLE FREQUENCY C-V TESTS. QUASI-STATIC / Dit TEST. GOI TESTS (hardware dependent): gate oxide integrity using forced, ramped, or pulsed voltage and current sources, histograms, TDDB plots, Weibull plots. I-V TESTS: current voltage characteristics of junction and MIS structures and oxide breakdown tests. THIN OXIDE PROGRAMS: Frequency-Shifting data gathering. CVC Analysis functions for quantum effects and polysilicon depletion effects.

Depending on characterization needs various combinations with Keysight Technologies or Keithley equipment as well as MDC probes and software can be configured to custom specifications.

(C-V/I-V specific) The system is delivered with a complete set of manuals and software. The SYSTEM SETUP software includes: programs to setup and zero the cap meter, utilities to choose system parameters like default temp and material parameters, utilities for checking system operation.

(C-V/I-V specific) A comprehensive on-screen HELP function provides specific program information about all program functions, measurement suggestions, technical information, and references.