MOS production C-V measurements with or w/o bias-temperature stress with correction of series resistance effects.
MOS ENGINEERING TESTS: MOS C-V and Conductance-Voltage plotting. Advanced features such as theoretical MOS C-V curve generation and Dit computation. Capacitance-Time measurements to determine substrate lifetime with Zerbst analysis. Doping profiling of sub-oxide regions. Thin oxide analysis using the Ricco method. Additional analyses: quantum effects and polysilicon depletion.
JUNCTION TESTS: special adaptive C-V data gathering and analyses for doping and resistivity profiles as well as junction series resistance and built-in potential.
On screen utilities to average doping and resistivity profiles.
VARIABLE FREQUENCY MOS C-V TESTS: to measure MOS device capacitance and conductance as a function of frequency and perform associated analyses to plots Interface Trap Density versus bandgap position using the Conductance-Frequency technique.
MULTIPLE FREQUENCY C-V TESTS: additional software to measure and plot a family of C-V and G-V curves as a function of measurement frequency.
QUASI-STATIC / Dit TEST: automatic data gathering of quasi-static or high frequency C-V plots and associated analyses to plot interface trap density. Analyses including quantum effects and polysilicon depletion.
GOI TESTS (hardware dependent): additional software to measure gate oxide integrity using forced, ramped, or pulsed voltage and current sources. Data presentation histograms, TDDB plots, Weibull plots.
I-V TESTS: additional software to measure & plot current voltage characteristics of junction and MIS structures and oxide breakdown tests.
THIN OXIDE PROGRAMS: measure and analyze thin oxides. Frequency-Shifting data gathering allows accurate measurement of thin oxide C-V plots in the presence of leakage.
The CVC Analysis functions analyze and model C-V plots affected by quantum effects and polysilicon depletion effects.